SIDR220DP-T1-RE3 Vishay Siliconix Single FETs MOSFETs

Mfr: Vishay Siliconix
Series: TrenchFET® Gen IV
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Vgs (Max): +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8DC
Package / Case: PowerPAK® SO-8