Mfr: Rohm Semiconductor
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 750 V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Vgs (Max): +21V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
FET Feature: -
Power Dissipation (Max): 176W
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247N
Package / Case: TO-247-3
Base Product Number: SCT4026
