Mfr: Microchip Technology
Series: -
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 3300 V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 105mOhm @ 30A, 20V
Vgs(th) (Max) @ Id: 2.97V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 20 V
Vgs (Max): +23V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 3462 pF @ 2400 V
FET Feature: -
Power Dissipation (Max): 381W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4
Package / Case: TO-247-4
Base Product Number: MSC080
