Mfr: Microchip Technology
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 115mOhm @ 15A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 750µA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 20 V
Vgs (Max): +23V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 700 V
FET Feature: -
Power Dissipation (Max): 91W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7
Package / Case: -
Base Product Number: MSC090