SIA4263DJ-T1-GE3 Vishay Siliconix Single FETs MOSFETs

Mfr: Vishay Siliconix
Series: TrenchFET® Gen III
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 52.2 nC @ 8 V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 3.29W (Ta), 15.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6
Package / Case: PowerPAK® SC-70-6