FBG20N18BC EPC Space, LLC Single FETs MOSFETs

Mfr: EPC Space, LLC
Series: -
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 26mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-SMD
Package / Case: 4-SMD, No Lead