GPIHV30SB5L GaNPower Single FETs MOSFETs

Mfr: GaNPower
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 30A
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs: 8.25 nC @ 6 V
Vgs (Max): +7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 400 V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die