IMBG65R107M1HXTMA1 Infineon Technologies Single FETs MOSFETs

Mfr: Infineon Technologies
Series: CoolSIC??M1
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Vgs (Max): +23V, -5V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: -
Base Product Number: IMBG65R