Mfr: Infineon Technologies
Series: HEXFET®
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: -
