SSM6J808R,LXHF Toshiba Semiconductor and Storage Single FETs MOSFETs

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Vgs (Max): +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: 150°C
Grade: Automotive
Qualification: AEC-Q101
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP-F
Package / Case: 6-SMD, Flat Leads
Base Product Number: SSM6J808