Mfr: Littelfuse Inc.
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 20 V
Vgs (Max): +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds: 317 pF @ 800 V
FET Feature: -
Power Dissipation (Max): 357W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4
Base Product Number: LSIC1MO120
