MSC017SMA120S Microchip Technology Single FETs MOSFETs

Mfr: Microchip Technology
Series: -
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V
Vgs (Max): +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V
FET Feature: -
Power Dissipation (Max): 357W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA
Base Product Number: MSC017SMA