Mfr: Microchip Technology
Series: -
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Vgs (Max): +23V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V
FET Feature: -
Power Dissipation (Max): 278W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA
