SSM3J168F,LF Toshiba Semiconductor and Storage Single FETs MOSFETs

Mfr: Toshiba Semiconductor and Storage
Series: U-MOSVI
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 1.2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Product Number: SSM3J168