TK39N60X,S1F Toshiba Semiconductor and Storage Single FETs MOSFETs

Mfr: Toshiba Semiconductor and Storage
Series: DTMOSIV-H
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
FET Feature: -
Power Dissipation (Max): 270W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3
Base Product Number: TK39N60