SSM3K329R,LF Toshiba Semiconductor and Storage Single FETs MOSFETs

Mfr: Toshiba Semiconductor and Storage
Series: U-MOSIII
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads
Base Product Number: SSM3K329