TPCC8008(TE12L,QM) Toshiba Semiconductor and Storage Single FETs MOSFETs

Mfr: Toshiba Semiconductor and Storage
Series: U-MOSIV
Package: Cut Tape (CT)
Product Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1A
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Package / Case: 8-VDFN Exposed Pad
Base Product Number: TPCC8008