Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 450 V
Current - Continuous Drain (Id) @ 25°C: 13.5A
Rds On (Max) @ Id, Vgs: 410mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack
Base Product Number: TK14A45
