SSM3J35MFV,L3F Toshiba Semiconductor and Storage Single FETs MOSFETs

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: VESM
Package / Case: SOT-723
Base Product Number: SSM3J35