SSM6J512NU,LF Toshiba Semiconductor and Storage Single FETs MOSFETs

Mfr: Toshiba Semiconductor and Storage
Series: U-MOSVII
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFNB (2x2)
Package / Case: 6-WDFN Exposed Pad
Base Product Number: SSM6J512