TPN2R703NL,L1Q Toshiba Semiconductor and Storage Single FETs MOSFETs

Mfr: Toshiba Semiconductor and Storage
Series: U-MOSVIII-H
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
FET Feature: -
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Package / Case: 8-PowerVDFN
Base Product Number: TPN2R703