SCTWA10N120 STMicroelectronics Single FETs MOSFETs

Mfr: STMicroelectronics
Series: -
Package: Tube
Product Status: Obsolete
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id: 3.5V @ 250µA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Vgs (Max): +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 1000 V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: HiP247??Long Leads
Package / Case: TO-247-3
Base Product Number: SCTWA10