NP33N06YDG-E1-AY Renesas Electronics Corporation Single FETs MOSFETs

Mfr: Renesas Electronics Corporation
Series: -
Package: Tape & Reel (TR)
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HSON
Package / Case: 8-SMD, Flat Lead Exposed Pad
Base Product Number: NP33N06