Mfr: IXYS
Series: HiPerFET?? Ultra X
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850 V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 360mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISO TO-247-3
Package / Case: TO-247-3
Base Product Number: IXFJ20
