IXFN50N120SIC IXYS Single FETs MOSFETs

Mfr: IXYS
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 20 V
Vgs (Max): +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 1000 V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC
Base Product Number: IXFN50