Menu

IXTA1R6N50D2 IXYS Single FETs MOSFETs

{{ product.price_format }}
{{ product.origin_price_format }}
Quantity:
Model: {{ product.model }}

{{ variable.name }}

{{ value.name }}
Request a quote

Description of your requirements:

Mfr: IXYS
Series: Depletion
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number: IXTA1

Datasheet

Cancel Submit
Add reviews
Add first reviews
  • {{ item.user_name }}
    {{ item.content }}
    Loading...
    {{ item.created_at }} {{ item.order_product_name }}