Mfr: Rohm Semiconductor
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Vgs (Max): +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
FET Feature: -
Power Dissipation (Max): 262W
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4
Base Product Number: SCT3030
