IRF630 Harris Corporation Single FETs MOSFETs

Mfr: Harris Corporation
Series: -
Package: Tube
Product Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
FET Feature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3