NP90N04VLG-E1-AY Renesas Electronics Corporation Single FETs MOSFETs

Mfr: Renesas Electronics Corporation
Series: -
Package: Bulk
Product Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63