RJK1003DPP-A0#T2 Renesas Electronics Corporation Single FETs MOSFETs

Mfr: Renesas Electronics Corporation
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 25W (Ta)
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220ABA
Package / Case: TO-220-3
Base Product Number: RJK1003