UPA2810T1L-E1-AY Renesas Electronics Corporation Single FETs MOSFETs

Mfr: Renesas Electronics Corporation
Series: -
Package: Bulk
Product Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN3333 (3.3x3.3)
Package / Case: 8-VDFN Exposed Pad