IRFD123 Harris Corporation Single FETs MOSFETs

Mfr: Harris Corporation
Series: -
Package: Tube
Product Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
FET Feature: -
Mounting Type: Through Hole
Supplier Device Package: 4-HVMDIP
Package / Case: 4-DIP (0.300\ 7.62mm)