Mfr: Renesas Electronics Corporation
Series: -
Package: Bulk
Product Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HUSON (2.7x2)
Package / Case: 8-WFDFN Exposed Pad