Mfr: Infineon Technologies
Series: HEXFET®
Package: Tube
Product Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
