IPP50R190CEXKSA1 Infineon Technologies Single FETs MOSFETs

Mfr: Infineon Technologies
Series: CoolMOS??CE
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
FET Feature: -
Power Dissipation (Max): 127W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3
Base Product Number: IPP50R190