IPI47N10SL26AKSA1 Infineon Technologies Single FETs MOSFETs

Mfr: Infineon Technologies
Series: SIPMOS®
Package: Tube
Product Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V
Vgs(th) (Max) @ Id: 2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 175W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number: IPI47N10