BSS169H6327XTSA1 Infineon Technologies Single FETs MOSFETs

Mfr: Infineon Technologies
Series: SIPMOS®
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Product Number: BSS169