ZXMN10A11GTA Diodes Incorporated Single FETs MOSFETs

Mfr: Diodes Incorporated
Series: -
Package: Tape & Reel (TR) Cut Tape (CT)
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223-3
Package / Case: TO-261-4, TO-261AA
Base Product Number: ZXMN10