BSM180D12P3C007 Rohm Semiconductor FET MOSFET Arrays

Mfr: Rohm Semiconductor
Series: -
Package: Bulk
Product Status: Active
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Power - Max: 880W
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Module
Supplier Device Package: Module
Base Product Number: BSM180