Mfr: Wolfspeed, Inc.
Series: -
Package: Tray
Product Status: Active
Technology: Silicon Carbide (SiC)
Configuration: 6 N-Channel
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Power - Max: 10mW
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
