Mfr: Microchip Technology
Series: -
Package: Tube
Product Status: Active
Technology: Silicon Carbide (SiC)
Configuration: 2 N Channel (Phase Leg)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1kV
Power - Max: 3.215kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI
Base Product Number: MSCSM120
