Mfr: Microchip Technology
Series: -
Package: Bulk
Product Status: Active
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Dual) Common Source
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V
Vgs(th) (Max) @ Id: 3.3V @ 22.5mA
Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V
Power - Max: 2400W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -
Base Product Number: MSCSM170