SSM6L39TU,LF Toshiba Semiconductor and Storage FET MOSFET Arrays

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Power - Max: 500mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6
Base Product Number: SSM6L39