EPC2105 EPC FET MOSFET Arrays

Mfr: EPC
Series: eGaN®
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
Technology: GaNFET (Gallium Nitride)
Configuration: 2 N-Channel (Half Bridge)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Base Product Number: EPC210