EPC2108 EPC FET MOSFET Arrays

Mfr: EPC
Series: eGaN®
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Obsolete
Technology: GaNFET (Gallium Nitride)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature: -
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Supplier Device Package: 9-BGA (1.35x1.35)
Base Product Number: EPC210