KA4A3Q-T1-A Renesas Electronics Corporation Single Pre-Biased Bipolar Transistors

Manufacturer: Renesas Electronics Corporation
Series: -
Packaging: Bulk
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 200 mW
Grade: -
Qualification: -
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75