PDTB113EQA147 NXP USA Inc. Single Pre-Biased Bipolar Transistors

Mfr: NXP USA Inc.
Series: PDTB113EQA
Package: Bulk
Product Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150 MHz
Power - Max: 940 mW
Grade: Automotive
Qualification: AEC-Q101
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3