PBSS5612PA,115 NXP Semiconductors Single Bipolar Transistors

Mfr: NXP Semiconductors
Series: -
Package: Bulk
Product Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V
Power - Max: 2.1 W
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Supplier Device Package: 3-HUSON (2x2)