HN4C06J-BL(TE85L,F Toshiba Semiconductor and Storage Bipolar Transistor Arrays

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tape & Reel (TR)
Product Status: Not For New Designs
Transistor Type: 2 NPN (Dual) Common Emitter
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV
Base Product Number: HN4C06