NESG2101M05-T1-A Renesas Electronics Corporation Bipolar RF Transistors

Manufacturer: Renesas Electronics Corporation
Series: -
Packaging: Bulk
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 17GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
Gain: 11dB ~ 19dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V
Current - Collector (Ic) (Max): 100mA
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: M05